Renesas Electronics Corporation
MOSFET 3N/3P-CH 60V 20A 20HSOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
|---|---|
| Konfiguration | 3 N and 3 P-Channel (3-Phase Bridge) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Power - Max | 54W |
| Gehäuse | Tray |
|---|---|
| Package / Case | 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
| Hersteller-Gehäuse | 20-HSOP |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 175°C |
| Qualification | AEC-Q101 |