Renesas Electronics Corporation
MOSFET N-CH 60V 85A 4LDPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 43A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Ta) |
| Max. Verlustleistung | 100W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-83 |
| Hersteller-Gehäuse | LDPAK |
| Betriebstemperatur | 150°C (TJ) |
|---|