Renesas Electronics Corporation
MOSFET N-CH 30V 35A 8WPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 17.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Max. Verlustleistung | 30W (Tc) |
| Package / Case | 8-WFDFN Exposed Pad |
|---|---|
| Hersteller-Gehäuse | 8-WPAK |
| Betriebstemperatur | 150°C (TJ) |
|---|