Renesas Electronics Corporation
POWER FIELD-EFFECT TRANSISTOR
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Max. Verlustleistung | 20W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-HWSON (3.3x3.3) |
| Betriebstemperatur | 150°C (TJ) |
|---|