Renesas Electronics Corporation
MOSFET N-CH 55V 80A TO263
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 40A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max. Verlustleistung | 1.8W (Ta), 115W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263 |
| Betriebstemperatur | 175°C (TJ) |
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