Renesas Electronics Corporation
MOSFET N-CH 60V 33A 8HSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 14mOhm @ 16.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Max. Verlustleistung | 1W (Ta), 97W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
| Hersteller-Gehäuse | 8-HSON |
| Betriebstemperatur | 175°C (TJ) |
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