Renesas Electronics Corporation
MOSFET 2N-CH 60V 30A 8HSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 14mOhm @ 15A, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Power - Max | 1W (Ta), 59W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerLDFN |
| Hersteller-Gehäuse | 8-HSON (5x5.4) |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 175°C |
| Qualification | AEC-Q101 |