Renesas Electronics Corporation
MOSFET 2N-CH 40V 30A 8HSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 10.1mOhm @ 15A, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 40V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Power - Max | 1W (Ta), 44W (Tc) |
| Package / Case | 8-PowerLDFN |
|---|---|
| Hersteller-Gehäuse | 8-HSON (5x5.4) |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 175°C |
| Qualification | AEC-Q101 |