Renesas Electronics Corporation
P-TRS2 AUTOMOTIVE MOS
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 90A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13950 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Max. Verlustleistung | 1.8W (Ta), 288W (Tc) |
| Gehäuse | Tray |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 175°C |
| Qualification | AEC-Q101 |