Renesas Electronics Corporation
MOSFET N-CH 40V 160A TO263-7
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 80A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 345 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20250 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Max. Verlustleistung | 1.8W (Ta), 250W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Hersteller-Gehäuse | TO-263-7 |
| Betriebstemperatur | 175°C (TJ) |
|---|