Renesas Electronics Corporation
MOSFET N-CH 40V 100A TO263
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7050 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Max. Verlustleistung | 1.8W (Ta), 176W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Hersteller-Gehäuse | TO-263 |
| Betriebstemperatur | 175°C (TJ) |
|---|