Renesas Electronics Corporation
MOSFET 2N-CH 5.5V 12A 20WLCSP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 6A, 4.5V |
|---|---|
| Basis-Teilenummer | KGF6 |
| Konfiguration | 2 N-Channel (Dual) Common Source |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 3.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 5.5V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain-Source-Spannung | 5.5V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Power - Max | 2.5W (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 20-UFLGA, CSP |
| Hersteller-Gehäuse | 20-WLCSP (2.48x1.17) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|