Renesas Electronics Corporation
MOSFET N-CH 5.5V 12A 6WLCSP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 12A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 3.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 5.5 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±5.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Drain-Source-Spannung | 5.5 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Max. Verlustleistung | 2.5W (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-SMD, No Lead |
| Hersteller-Gehäuse | 6-WLCSP (1.47x1.47) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|