Renesas Electronics Corporation
IC GATE DRVR HALF-BRIDGE 10TDFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | ISL2111 |
|---|---|
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 9ns, 7.5ns |
| Current - Peak Output (Source, Sink) | 3A, 4A |
|---|---|
| High Side Voltage - Max (Bootstrap) | 114 V |
| Logic Voltage - VIL, VIH | 1.4V, 2.2V |
| Versorgungsspannung | 8V ~ 14V |
| Gehäuse | Tray |
|---|---|
| Package / Case | 10-WDFN Exposed Pad |
| Hersteller-Gehäuse | 10-TDFN (4x4) |
| Betriebstemperatur | -40°C ~ 125°C (TJ) |
|---|