Renesas Electronics Corporation
MOSFET N-CH 600V 200MA TO92-3
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 16.5Ohm @ 100mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 66 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Max. Verlustleistung | 750mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Hersteller-Gehäuse | TO-92-3 |
| Betriebstemperatur | 150°C (TJ) |
|---|