Renesas Electronics Corporation
100V/4A PWM INPUT HALF BRIDGE DR
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Channel Type | Synchronous |
|---|---|
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Current - Peak Output (Source, Sink) | 3A, 4A |
|---|---|
| High Side Voltage - Max (Bootstrap) | 115 V |
| Logic Voltage - VIL, VIH | 1.47V, 1.84V |
| Versorgungsspannung | 6V ~ 18V |
| Gehäuse | Tube |
|---|---|
| Package / Case | 10-WDFN Exposed Pad |
| Hersteller-Gehäuse | 10-TDFN (4x4) |
| Betriebstemperatur | -40°C ~ 125°C (TJ) |
|---|