Renesas Electronics Corporation
IC GATE DRVR HALF-BRIDGE 8SOIC
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | HIP2100 |
|---|---|
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Surface Mount |
| Number of Drivers | 2 |
| Product Status | Obsolete |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Current - Peak Output (Source, Sink) | 2A, 2A |
|---|---|
| High Side Voltage - Max (Bootstrap) | 114 V |
| Logic Voltage - VIL, VIH | 4V, 7V |
| Versorgungsspannung | 9V ~ 14V |
| Gehäuse | Tube |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Hersteller-Gehäuse | 8-SOIC-EP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|