Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 500mA, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-Source-Spannung | 250 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Max. Verlustleistung | 900mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Hersteller-Gehäuse | TO-92MOD |
| Betriebstemperatur | 150°C (TJ) |
|---|