Renesas Electronics Corporation
MOSFET N-CH 900V 8A TO3P
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V |
|---|---|
| Basis-Teilenummer | 2SK1775 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Drain-Source-Spannung | 900 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Max. Verlustleistung | 60W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-3P |
| Betriebstemperatur | 150°C (TJ) |
|---|