Renesas Electronics Corporation
MOSFET P-CH 60V 20A TO220
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
| Hersteller | Renesas Electronics Corporation |
| Montageart | Through Hole |
| Product Status | Last Time Buy |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Max. Verlustleistung | 2W (Ta), 25W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-220-3 Isolated Tab |
| Hersteller-Gehäuse | TO-220 Isolated Tab |
| Betriebstemperatur | 150°C (TJ) |
|---|