Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 13.5A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3610 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Max. Verlustleistung | 20W (Ta) |
| Gehäuse | Tray |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-HWSON (3.3x3.3) |
| Betriebstemperatur | 150°C |
|---|