Renesas Electronics America Inc
MOSFET N-CH 60V 2.4A UPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Max. Verlustleistung | 1.5W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-243AA |
| Hersteller-Gehäuse | UPAK |
| Betriebstemperatur | 150°C(TJ) |
|---|