Renesas Electronics America Inc
MOSFET N-CH 80V 35A LFPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 17.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Max. Verlustleistung | 65W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-100, SOT-669 |
| Hersteller-Gehäuse | LFPAK |
| Betriebstemperatur | 150°C(TJ) |
|---|