Renesas Electronics America Inc
MOSFET N-CH 60V 25A 8WPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 12.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Max. Verlustleistung | 50W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-WFDFN Exposed Pad |
| Hersteller-Gehäuse | 8-WPAK |
| Betriebstemperatur | 150°C(TJ) |
|---|