Renesas Electronics America Inc
MOSFET N-CH 30V 50A 8WPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Max. Verlustleistung | 55W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-WFDFN Exposed Pad |
| Hersteller-Gehäuse | 8-WPAK |
| Betriebstemperatur | 150°C(TJ) |
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