Renesas Electronics America Inc
MOSFET N-CH 25V 50A 8WPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-WPAK |
| Betriebstemperatur | 150°C(TJ) |
|---|