Renesas Electronics America Inc
MOSFET N-CH 55V 32A TO252
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 16A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Max. Verlustleistung | 1.2W (Ta), 66W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Hersteller-Gehäuse | TO-252 (MP-3ZK) |
| Betriebstemperatur | 175°C(TJ) |
|---|