Renesas Electronics America Inc
MOSFET N-CH 60V 82A TO220
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 41A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Ta) |
| Max. Verlustleistung | 1.5W (Ta), 156W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Isolated Tab |
| Hersteller-Gehäuse | TO-220 Isolated Tab |
| Betriebstemperatur | 150°C(TJ) |
|---|