Renesas Electronics America Inc
15A, 100V, N-CHANNEL MOSFET
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 43mOhm @ 7.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 100 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-WPAK |
| Betriebstemperatur | 150°C(TJ) |
|---|