Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 15.3mOhm @ 12.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Max. Verlustleistung | 30W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerSOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-LFPAK-iV |
| Betriebstemperatur | 150°C(TJ) |
|---|