Renesas Electronics America Inc
MOSFET N-CH 100V 83A TO-263
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11mOhm @ 42A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 100 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Max. Verlustleistung | 1.5W (Ta), 125W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263, TO-220SMD |
| Betriebstemperatur | 150°C(TJ) |
|---|