Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 12Ohm @ 1A, 15V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 10 V |
| Hersteller | Renesas Electronics America Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 1500 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max. Verlustleistung | 50W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-3PFM |
| Betriebstemperatur | 150°C |
|---|