Allgemein
| Driven Configuration | Half-Bridge |
|---|---|
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Hersteller | Power Integrations |
| Montageart | Through Hole |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 160ns, 130ns |
| Serie | SCALE™-1 |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Driven Configuration | Half-Bridge |
|---|---|
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Hersteller | Power Integrations |
| Montageart | Through Hole |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 160ns, 130ns |
| Serie | SCALE™-1 |
| Current - Peak Output (Source, Sink) | 18A, 18A |
|---|
| Gehäuse | Tray |
|---|---|
| Package / Case | 44-DIP Module, 42 Leads |
| Hersteller-Gehäuse | Module |
| Betriebstemperatur | -40°C~85°C |
|---|