Panasonic Electronic Components
MOSFET N-CH 30V 18A 8HSSO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 14.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3920 pF @ 10 V |
| Hersteller | Panasonic Electronic Components |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 3.35mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 70A (Tc) |
| Max. Verlustleistung | 2W (Ta), 28W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerSMD, Flat Leads |
| Hersteller-Gehäuse | HSSO8-F1-B |
| Betriebstemperatur | 150°C (TJ) |
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