Panasonic Electronic Components
MOSFET N CH 20V 2A SMINI3-G1-B
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1A, 4V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |
| Hersteller | Panasonic Electronic Components |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-70, SOT-323 |
| Hersteller-Gehäuse | SMini3-G1-B |
| Betriebstemperatur | 150°C(TJ) |
|---|