Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 112mOhm @ 5A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Max. Verlustleistung | 1W (Ta), 15W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Hersteller-Gehäuse | IPAK/TP |
| Betriebstemperatur | 150°C(TJ) |
|---|