Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 125mOhm @ 1A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 128 pF @ 10 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Hersteller-Gehäuse | SOT-563/SCH6 |
| Betriebstemperatur | 150°C (TJ) |
|---|