Allgemein
| Ausgangskonfiguration | Phototransistor |
|---|---|
| Basis-Teilenummer | QVE000 |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Response Time | 7µs |
| Sensing Distance | 0.079" (2mm) |
| Sensing Method | Through-Beam |
| Typ | Unamplified |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Ausgangskonfiguration | Phototransistor |
|---|---|
| Basis-Teilenummer | QVE000 |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Response Time | 7µs |
| Sensing Distance | 0.079" (2mm) |
| Sensing Method | Through-Beam |
| Typ | Unamplified |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
|---|---|
| Current - Collector (Ic) (Max) | 20 mA |
| Current - DC Forward (If) (Max) | 50 mA |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-SMD, Flat Leads |
| Betriebstemperatur | -55°C ~ 100°C |
|---|