Allgemein
| Rds On (Max) @ Id, Vgs | 224mOhm @ 12A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 800 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | Automotive, AEC-Q101 |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -15V |
| Vgs(th) (Max) @ Id | 4.3V @ 2.5mA |