Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 84mOhm @ 20A, 15V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 450 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +19V, -10V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Drain-Source-Spannung | 900 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Max. Verlustleistung | 221W (Tc) |
| Gehäuse | Tube |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |