Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1194 pF @ 15 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Obsolet |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta), 34A (Tc) |
| Max. Verlustleistung | 890mW (Ta), 20W (Tc) |
| Package / Case | 8-PowerWDFN |
|---|---|
| Hersteller-Gehäuse | 8-WDFN (3.3x3.3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|