Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.8A, 10V |
|---|---|
| Basis-Teilenummer | NTTFD022 |
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 50V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 44µA |
| Drain-Source-Spannung | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 24A (Tc) |
| Power - Max | 1.7W (Ta), 26W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 12-PowerWQFN |
| Hersteller-Gehäuse | 12-WQFN (3.3x3.3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|