Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20.7mOhm @ 5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 40 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta) |
| Max. Verlustleistung | 3.5W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerTDFN, 5 Leads |
| Hersteller-Gehäuse | 5-DFN (5x6) (8-SOFL) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|