Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V |
|---|---|
| Basis-Teilenummer | NTMC083 |
| Konfiguration | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V, 8.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 222pF @ 50V, 525pF @ 50V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc) |
| Power - Max | 1.6W (Ta), 3.1W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOIC |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|