Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 260mOhm @ 880mA, 4.5V |
|---|---|
| Basis-Teilenummer | NTJD4152 |
| Konfiguration | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 20V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Power - Max | 272mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | SC-88/SC70-6/SOT-363 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|