Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 18mOhm @ 75A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 283 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4790 pF @ 325 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +22V, -8V |
| Vgs(th) (Max) @ Id | 4.3V @ 25mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 163A (Tc) |
| Max. Verlustleistung | 643W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|