Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 12 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 98A (Tc) |
| Max. Verlustleistung | 1.35W (Ta), 66.7W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-251-3 Stub Leads, IPak |
| Hersteller-Gehäuse | I-Pak |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|