Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1112 pF @ 800 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -15V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Max. Verlustleistung | 178W (Tc) |
| Gehäuse | Tray |
|---|---|
| Package / Case | Die |
| Hersteller-Gehäuse | Die |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|