Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 112A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11110 pF @ 30 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 562µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta), 342A (Tc) |
| Max. Verlustleistung | 3.7W (Ta), 245W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | TO-263 (D2PAK) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|