Allgemein
| Basis-Teilenummer | NSS35200 |
|---|---|
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 2A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | NSS35200 |
|---|---|
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 2V |
| Power - Max | 635 mW |
| Frequency - Transition | 100MHz |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SMD, Flat Lead |
| Hersteller-Gehäuse | ChipFET™ |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|